How many electrons does it take to store a single bit of information? For today’s most advanced dynamic random access memory (DRAM) chips from Samsung and SK Hynix, the answer is roughly 200,000. That is the price of reliability – a vast reservoir of charge needed to ensure a “1” or “0” does not fade into noise. But a team at Fudan University in Shanghai has just collapsed that number to its theoretical floor: one. In a paper published on July 16 in Science, microelectronics professor Zhou Peng...